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2SD2088 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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2SD2088 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SD2088 2003-02-04 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications · High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) · Zener diode included between collector and base. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 ± 10 V Collector-emitter voltage VCEO 60 ± 10 V Emitter-base voltage VEBO 8 V Collector current IC 2 A Base current IB 0.5 A Collector power dissipation PC 0.9 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Equivalent Circuit Unit: mm JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) BASE EMITTER ≈ 4 kΩ ≈ 800 Ω COLLECTOR |
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