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74LVC2G126DP 데이터시트(PDF) 7 Page - NXP Semiconductors |
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74LVC2G126DP 데이터시트(HTML) 7 Page - NXP Semiconductors |
7 / 16 page 74LVC2G126_6 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 06 — 7 September 2007 7 of 16 NXP Semiconductors 74LVC2G126 Dual bus buffer/line driver; 3-state 11. Dynamic characteristics [1] Typical values are measured at Tamb =25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively. [2] tpd is the same as tPLH and tPHL [3] ten is the same as tPZH and tPZL [4] tdis is the same as tPLZ and tPHZ [5] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; ∑(C L × VCC 2 × f o) = sum of outputs. Table 8. Dynamic characteristics Voltages are referenced to GND (ground 0 V); for test circuit see Figure 8. Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max tpd propagation delay nA to nY; see Figure 6 [2] VCC = 1.65 V to 1.95 V 1.0 3.9 9.8 1.0 12.3 ns VCC = 2.3 V to 2.7 V 0.5 2.6 4.9 0.5 6.3 ns VCC = 2.7 V 1.0 2.8 4.7 1.0 5.9 ns VCC = 3.0 V to 3.6 V 0.5 2.4 4.3 0.5 5.4 ns VCC = 4.5 V to 5.5 V 0.5 1.9 3.2 0.5 4.0 ns ten enable time nOE to nY; see Figure 7 [3] VCC = 1.65 V to 1.95 V 1.0 4.1 10.0 1.0 12.5 ns VCC = 2.3 V to 2.7 V 1.0 2.6 5.0 1.0 6.3 ns VCC = 2.7 V 1.0 2.8 4.7 1.0 5.9 ns VCC = 3.0 V to 3.6 V 1.0 2.4 4.1 1.0 5.1 ns VCC = 4.5 V to 5.5 V 0.5 1.8 3.1 0.5 3.9 ns tdis disable time nOE to nY; see Figure 7 [4] VCC = 1.65 V to 1.95 V 1.0 3.3 12.6 1.0 15.4 ns VCC = 2.3 V to 2.7 V 0.5 1.9 5.7 0.5 7.5 ns VCC = 2.7 V 1.5 3.0 4.8 1.5 6.2 ns VCC = 3.0 V to 3.6 V 1.0 2.5 4.4 1.0 5.7 ns VCC = 4.5 V to 5.5 V 0.5 1.8 3.3 0.5 4.4 ns CPD power dissipation capacitance per buffer; VI = GND to VCC [5] output enabled - 17 - - - pF output disabled - 5 - - - pF |
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