전자부품 데이터시트 검색엔진 |
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TPCM8001-H 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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TPCM8001-H 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPCM8001-H 2006-11-16 1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 6.0 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.) • High forward transfer admittance: |Yfs| =36 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 20 Drain current Pulsed (Note 1) IDP 60 A Drain power dissipation (Tc=25 °C) PD 30 W Drain power dissipation (t = 10 s) (Note 2a) PD 2.3 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single-pulse avalanche energy (Note 3) EAS 104 mJ Avalanche current IAR 20 A Repetitive avalanche energy (Tc=25 °C) (Note 4) EAR 1.8 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 0.8±0.1 2.75±0.2 1 4 5 8 0.8 0.25±0.05 0.55 1 4 5 8 0.05 M A 0.2+0 - 0.2 3.5±0.2 A S 0.05 S 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN JEDEC ― JEITA ― TOSHIBA 2-4L1A Weight: 0.028 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 4 |
유사한 부품 번호 - TPCM8001-H_07 |
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유사한 설명 - TPCM8001-H_07 |
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