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TPCM8001-H 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 TPCM8001-H
상세설명  TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCM8001-H 데이터시트(HTML) 1 Page - Toshiba Semiconductor

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TPCM8001-H
2006-11-16
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCM8001-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 6.0 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.)
• High forward transfer admittance: |Yfs| =36 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
20
Drain current
Pulsed (Note 1)
IDP
60
A
Drain power dissipation (Tc=25
°C)
PD
30
W
Drain power dissipation
(t
= 10 s)
(Note 2a)
PD
2.3
W
Drain power dissipation
(t
= 10 s)
(Note 2b)
PD
1.0
W
Single-pulse avalanche energy
(Note 3)
EAS
104
mJ
Avalanche current
IAR
20
A
Repetitive avalanche energy
(Tc=25
°C) (Note 4)
EAR
1.8
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
0.8±0.1
2.75±0.2
1
4
5
8
0.8
0.25±0.05
0.55
1
4
5
8
0.05 M A
0.2+0
- 0.2
3.5±0.2
A
S
0.05 S
1,2,3:SOURCE
4:GATE
5,6,7,8:DRAIN
JEDEC
JEITA
TOSHIBA
2-4L1A
Weight: 0.028 g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4


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