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TPCP8H01 데이터시트(PDF) 5 Page - Toshiba Semiconductor

부품명 TPCP8H01
상세설명  TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TPCP8H01 데이터시트(HTML) 5 Page - Toshiba Semiconductor

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TPCP8H01
2006-11-13
5
Pulse width tw (s)
rth (j-c) – tw
Collector
−emitter voltage VCE (V)
Safe operating area
0.001
1
1
10
10
100
1000
1000
0.01
0.1
100
0.1
1
10
100
0.01
0.1
1
10
IC max (Pulsed) *
10
μs*
100
μs*
1 ms*
IC max (Continuous)
DC operation
(Ta
= 25°C)
10 ms*
10 s*
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta
= 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2)
*: Single nonrepetitive pulse
Ta
= 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board
(glass epoxy, 1.6 mm thick, Cu
area: 645 mm
2).
These characteristic curves
must be derated linearly with
increase in temperature.
100 ms*


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