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TPCP8J01 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 TPCP8J01
상세설명  TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
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제조업체  TOSHIBA [Toshiba Semiconductor]
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TPCP8J01
2006-11-17
1
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
TPCP8J01
Notebook PC Applications
Portable Equipment Applications
• Lead(Pb)-Free
• Small mounting area due to small and thin package
• Low drain-source ON resistance: P Channel RDS (ON) = 27 mΩ (typ.)
• High forward transfer admittance: P Channel |Yfs| = 9.6 S (typ.)
• Low leakage current: IDSS = −10 μA (VDS = −32 V)
• Enhancement-mode: P Channel Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
MOSFET
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−32
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−32
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
−5.5
Drain current
Pulse (Note 1)
IDP
−22
A
Drain power dissipation
(t
= 5 s)
(Note 2a)
PD
2.14
W
Drain power dissipation
(t
= 5 s)
(Note 2b)
PD
1.06
W
Single pulse avalanche energy
(Note 3)
EAS
5.8
mJ
Avalanche current
IAR
−3
A
Repetitive avalanche energy (Note 4)
EAR
0.21
mJ
BRT
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
DC
(Note 1)
IC
100
mA
Collector power dissipation
PC
200
mW
Note: For Notes 1 to 5, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with caution.
Unit: mm
1. Emitter
5. Source
2. Drain
6. Gate
3. Drain
7. Base
4. Drain
8. Collector
JEDEC
JEITA
TOSHIBA
2-3V1G
Weight: 0.011 g (typ.)
Circuit Configuration
Marking (Note5)
8J01
1
2
3
4
8
7
6
5
Lot No.
0.33±0.05
0.28+0.1
-0.11
1.12+0.13
-0.12
0.475
0.65
A
0.05 M
2.9±0.1
4
1
5
8
0.8±0.05
0.17±0.02
B
B
0.05 M
A
S
0.025
S
1.12+0.13
-0.12
0.28+0.1
-0.11
1
2
3
4
8
7
6
5
R1
R2


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