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TPCP8J01 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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1 / 9 page TPCP8J01 2006-11-17 1 TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type TPCP8J01 Notebook PC Applications Portable Equipment Applications • Lead(Pb)-Free • Small mounting area due to small and thin package • Low drain-source ON resistance: P Channel RDS (ON) = 27 mΩ (typ.) • High forward transfer admittance: P Channel |Yfs| = 9.6 S (typ.) • Low leakage current: IDSS = −10 μA (VDS = −32 V) • Enhancement-mode: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Symbol Rating Unit Drain-source voltage VDSS −32 V Drain-gate voltage (RGS = 20 kΩ) VDGR −32 V Gate-source voltage VGSS ±20 V DC (Note 1) ID −5.5 Drain current Pulse (Note 1) IDP −22 A Drain power dissipation (t = 5 s) (Note 2a) PD 2.14 W Drain power dissipation (t = 5 s) (Note 2b) PD 1.06 W Single pulse avalanche energy (Note 3) EAS 5.8 mJ Avalanche current IAR −3 A Repetitive avalanche energy (Note 4) EAR 0.21 mJ BRT Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current DC (Note 1) IC 100 mA Collector power dissipation PC 200 mW Note: For Notes 1 to 5, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with caution. Unit: mm 1. Emitter 5. Source 2. Drain 6. Gate 3. Drain 7. Base 4. Drain 8. Collector JEDEC ― JEITA ― TOSHIBA 2-3V1G Weight: 0.011 g (typ.) Circuit Configuration Marking (Note5) 8J01 1 2 3 4 8 7 6 5 ※ Lot No. 0.33±0.05 0.28+0.1 -0.11 1.12+0.13 -0.12 0.475 0.65 A 0.05 M 2.9±0.1 4 1 5 8 0.8±0.05 0.17±0.02 B B 0.05 M A S 0.025 S 1.12+0.13 -0.12 0.28+0.1 -0.11 1 2 3 4 8 7 6 5 R1 R2 |
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