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TPD1024S 데이터시트(PDF) 3 Page - Toshiba Semiconductor

부품명 TPD1024S
상세설명  Low-side Power Switch for Motors, Solenoids, and Lamp Drivers
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD1024S 데이터시트(HTML) 3 Page - Toshiba Semiconductor

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TPD1024S
2006-10-31
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDS (DC)
40
V
Output current
ID
1.5
A
Input voltage
VGS
−0.5 ~ 6
V
Ta = 25°C
1
Power dissipation
Tc = 25°C
PD
10
W
Operating temperature
Topr
−40 ~ 85
°C
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 ~ 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Tj = 25°C)
Characteristic
Symbol
Test
Cir-
cuit
Test Condition
Min
Typ.
Max
Unit
Drain-source breakdown voltage
V(BR) DSS
VGS = 0, ID = 10 mA
40
V
Operating supply voltage
VDD (OPR)
――
18
V
IDSS (1)
VGS = 0, VDS = 40 V
3
mA
Current at output off
IDSS (2)
VGS = 0, VDS = 24 V
100
μA
Input threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.5
V
Input current
IGSS
VGS = 5 V,
at normal operation
300
μA
On resistance
RDS (ON)
VGS = 5 V, ID = 1 A
0.5
Ω
Thermal shutdown temperature
TS
――
160
°C
Overcurrent protection
IS
VDS = 12 V, VGS = 5 V
3.5
A
tON
50
μs
Switching time
tOFF
1
VDS = 12 V, VGS = 5 V,
RL = 12Ω
10
μs
Diode forward voltage
Between drain and source
VDSF
IF = 1.5 A
0.9
1.8
V
Avalanche energy
EA
L = 10 mH, Single pulse
30
mJ
Test Circuit 1


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