전자부품 데이터시트 검색엔진 |
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TPD1024S 데이터시트(PDF) 3 Page - Toshiba Semiconductor |
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TPD1024S 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page TPD1024S 2006-10-31 3 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDS (DC) 40 V Output current ID 1.5 A Input voltage VGS −0.5 ~ 6 V Ta = 25°C 1 Power dissipation Tc = 25°C PD 10 W Operating temperature Topr −40 ~ 85 °C Junction temperature Tj 150 °C Storage temperature Tstg −55 ~ 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Tj = 25°C) Characteristic Symbol Test Cir- cuit Test Condition Min Typ. Max Unit Drain-source breakdown voltage V(BR) DSS ― VGS = 0, ID = 10 mA 40 ― ― V Operating supply voltage VDD (OPR) ―― ― ― 18 V IDSS (1) ― VGS = 0, VDS = 40 V ― ― 3 mA Current at output off IDSS (2) ― VGS = 0, VDS = 24 V ― ― 100 μA Input threshold voltage Vth ― VDS = 10 V, ID = 1 mA 0.8 ― 2.5 V Input current IGSS ― VGS = 5 V, at normal operation ― ― 300 μA On resistance RDS (ON) ― VGS = 5 V, ID = 1 A ― ― 0.5 Ω Thermal shutdown temperature TS ―― ― 160 ― °C Overcurrent protection IS ― VDS = 12 V, VGS = 5 V ― 3.5 ― A tON ― 50 ― μs Switching time tOFF 1 VDS = 12 V, VGS = 5 V, RL = 12Ω ― 10 ― μs Diode forward voltage Between drain and source VDSF ― IF = 1.5 A ― 0.9 1.8 V Avalanche energy EA ― L = 10 mH, Single pulse 30 ― ― mJ Test Circuit 1 |
유사한 부품 번호 - TPD1024S_07 |
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유사한 설명 - TPD1024S_07 |
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