전자부품 데이터시트 검색엔진 |
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2SC3075 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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2SC3075 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SC3075 2006-11-09 4 Safe Operating Area Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) Switching Characteristics Base-emitter voltage VBE (V) IC – VBE Pulse width tw (s) rth – tw Collector-emitter voltage VCE (V) 10 −3 0 Common emitter VCE = 5 V −40 25 Tc = 100°C 1 10 −1 10 −2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Curves should be applied in thermal limited area. (Single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 0.1 0.001 100 0.01 0.1 1 10 100 1000 10 1 (1) (2) IC/IB = 10 IB1 = −IB2 Pulse width = 20 μs Duty cycle ≤ 1% Tc = 25°C 0.1 0 100 10 30 50 3 5 1 0.3 0.5 0.1 0.2 0.3 0.4 0.5 tstg tf tr 0 0 Common emitter VCE = 5 V 1000 800 600 400 200 0.2 0.4 0.6 0.8 1.2 1.0 −40 25 Tc = 100°C 10 3 0.01 1 1 0.3 0.1 0.05 0.03 3 30 300 100 1000 0.5 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* VCEO max 1 ms* 10 μs* 100 μs* DC operation Tc = 25°C 100 ms* 10 ms* |
유사한 부품 번호 - 2SC3075_06 |
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유사한 설명 - 2SC3075_06 |
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