2SK2013

2006-11-21

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK2013

Audio Frequency Power Amplifier Application

High breakdown voltage

High forward transfer admittance

Complementary to 2SJ313

Characteristics

Symbol

Rating

Unit

Drain−source voltage

180

V

Gate−source voltage

±20

V

Drain current

(Note 1)

1

A

Drain power dissipation (Tc = 25°C)

25

W

Channel temperature

150

°C

Storage temperature range

−55~150

°C

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Marking

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

—

—

±100

nA

Drain−source breakdown voltage

180

—

—

V

Gate−source cut−off voltage (Note 2)

1.8

—

2.8

V

Drain−source saturation voltage

—

1.7

3.0

V

Forward transfer admittance

—

0.7

—

S

Input capacitance

—

170

—

Output capacitance

—

45

—

Reverse transfer capacitance

—

17

—

pF

Note 1: Ensure that the channel temperature does not exceed 150°C.

O: 0.8~1.6,

Y: 1.4~2.8

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Unit: mm

JEDEC

―

JEITA

SC−67

TOSHIBA

2-10R1B

Weight: 1.9 g (typ.)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

K2013

Part No. (or abbreviation code)