전자부품 데이터시트 검색엔진 |
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2SK2229 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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2SK2229 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2229 2006-11-17 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 60 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 60 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V VGS = 4 V, ID = 1.3 A — 0.20 0.30 Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 2.5 A — 0.12 0.16 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 3.0 5.0 — S Input capacitance Ciss — 370 — Reverse transfer capacitance Crss — 60 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 180 — pF Rise time tr — 18 — Turn−on time ton — 25 — Fall time tf — 55 — Switching time Turn−off time toff — 170 — ns Total gate charge (Gate−source plus gate−drain) Qg — 12 — Gate−source charge Qgs — 8 — Gate−drain (“miller”) charge Qgd VDD ≈ 48 V, VGS = 10 V, ID = 5 A — 4 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 5 A Pulse drain reverse current (Note 1) IDRP — — — 20 A Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V — — −1.7 V Reverse recovery time trr — 70 — ns Reverse recovered charge Qrr IDR = 5 A, VGS = 0 V, dIDR/dt = 50 A/μs — 0.1 — μC Marking K2229 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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