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2SK2493 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 2SK2493
상세설명  Silicon N Channel MOS Type Chopper Regulator and DC−DC Converter Applications
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK2493 데이터시트(HTML) 2 Page - Toshiba Semiconductor

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2SK2493
2006-11-16
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±6.5 V, VDS = 0 V
±10
μA
Drain cut−off current
IDSS
VDS = 16 V, VGS = 0 V
100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
16
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.5
1.1
V
VGS = 2.5 V, ID = 2.5 A
0.08
0.12
Drain−source ON resistance
RDS (ON)
VGS = 4 V, ID = 2.5 A
0.07
0.1
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
4.0
8.0
S
Input capacitance
Ciss
1200
Reverse transfer capacitance
Crss
110
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
380
pF
Rise time
tr
30
Turn−on time
ton
50
Fall time
tf
200
Switching time
Turn−off time
toff
650
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
23
Gate−source charge
Qgs
17
Gate−drain (“miller”) charge
Qgd
VDD ≈ 16 V, VGS = 5 V, ID = 5 A
6
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
120
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dIDR / dt = 50 A / μs
0.12
μC
Marking
K2493
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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