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2SK2662 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 2SK2662
상세설명  Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK2662 데이터시트(HTML) 2 Page - Toshiba Semiconductor

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2SK2662
2006-11-02
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate−source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut−off current
IDSS
VDS = 500 V, VGS = 0 V
100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
1.35
1.50
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.5
4.0
S
Input capacitance
Ciss
780
Reverse transfer capacitance
Crss
60
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
200
pF
Rise time
tr
12
Turn−on time
ton
25
Fall time
tf
15
Switching time
Turn−off time
toff
60
ns
Total gate charge (gate−source
plus gate−drain)
Qg
17
Gate−source charge
Qgs
11
Gate−drain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 5 A
6
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
1400
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dIDR / dt = 100 A / μs
9
μC
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2662
Part No. (or abbreviation code)


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