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2SK2854 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 2SK2854
상세설명  FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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2SK2854
2007-11-01
1
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK2854
UHF BAND AMPLIFIER APPLICATION
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These TOSHIBA
products are neither intended nor warranted for any other use.Do not use
these TOSHIBA products listed in this document except for high frequency
Power Amplifier of telecommunications equipment.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
10
V
Gate-Source Voltage
VGSS
±6
V
Drain Current
ID
0.5
A
Drain Power Dissipation
PD (Note 1)
0.5
W
Channel Temperature
Tch
150
°C
Storage Temperature Range
Tstg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Tc = 25°C When mounted on a 1.6mm glass epoxy PCB
MARKING
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
JEDEC
JEITA
SC−62
TOSHIBA
2−5K1D
Unit in mm
1
U
P
23
1. Gate
2. Source
3. Drain
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
Lot No.


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