전자부품 데이터시트 검색엔진 |
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1SV225 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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1SV225 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SV225 2007-11-01 1 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV225 Electronic Tuning Applications of FM Receivers • Low series resistance: rs = 0.35 (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 32 V Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR = 10 μA 32 ⎯ ⎯ V Reverse current IR VR = 30 V ⎯ ⎯ 50 nA Capacitance C3 V VR = 3 V, f = 1 MHz (Note 1) 18.5 19.7 21 pF Capacitance C30 V VR = 30 V, f = 1 MHz (Note 1) 6.6 7.2 7.7 pF Capacitance ratio C3 V/C30 V ⎯ (Note 1) 2.6 2.9 ⎯ Series resistance rs VR = 3 V, f = 100 MHz (Note 1) ⎯ 0.35 0.5 Ω Note 1: Characteristics between anode 1 and anode 2 Marking Unit: mm JEDEC ― JEITA SC-59 TOSHIBA 1-3G1F Weight: 0.013 g (typ.) |
유사한 부품 번호 - 1SV225_07 |
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유사한 설명 - 1SV225_07 |
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