2SK2993

2006-11-21

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2993

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Low drain−source ON resistance

High forward transfer admittance

Enhancement mode

Characteristics

Symbol

Rating

Unit

Drain−source voltage

250

V

250

V

Gate−source voltage

±20

V

DC

(Note 1)

20

Drain current

Pulse (Note 1)

60

A

Drain power dissipation (Tc = 25°C)

100

W

Single pulse avalanche energy

(Note 2)

423

mJ

Avalanche current

20

A

Repetitive avalanche energy (Note 3)

10

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

temperature/current/voltage and the significant change in temperature, etc.) may

cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate reliability upon

reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

1.25

°C / W

Thermal resistance, channel to

ambient

83.3

°C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-10S1B

Weight: 1.5 g (typ.)

JEDEC

―

JEITA

―

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)