2SK3569

2006-11-08

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3569

Switching Regulator Applications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

600

V

600

V

Gate-source voltage

±30

V

DC

(Note 1)

10

Drain current

Pulse (t

= 1 ms)

(Note 1)

40

A

Drain power dissipation (Tc

= 25°C)

45

W

Single pulse avalanche energy

(Note 2)

363

mJ

Avalanche current

10

A

Repetitive avalanche energy (Note 3)

4.5

mJ

Channel temperature

150

°C

Storage temperature range

-55~150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

2.78

°C/W

Thermal resistance, channel to ambient

62.5

°C/W

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

1: Gate

2: Drain

3: Source

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10U1B

Weight : 1.7 g (typ.)

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