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SSM3J305T 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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1 / 6 page SSM3J305T 2007-11-01 1 TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications • 4 V drive • Low ON-resistance: Ron = 477 mΩ (max) (@VGS = −4 V) Ron = 237 mΩ (max) (@VGS = −10 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage VDS −30 V Gate–source voltage VGSS ± 20 V DC ID −1.7 Drain current Pulse IDP −3.4 A Drain power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = −1 mA, VGS = 0 −30 ⎯ ⎯ Drain–source breakdown voltage V (BR) DSX ID = −1 mA, VGS = + 20 V −15 ⎯ ⎯ V Drain cutoff current IDSS VDS = −30 V, VGS = 0 ⎯ ⎯ −1 μA Gate leakage current IGSS VGS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = −5 V, ID = −1 mA −1.2 ⎯ −2.6 V Forward transfer admittance ⏐Yfs⏐ VDS = −5 V, ID =− 0.65 A (Note 2) 0.8 1.5 ⎯ S ID = −0.65 A, VGS = −10 V (Note 2) ⎯ 177 237 Drain–source ON-resistance RDS (ON) ID = −0.4 A, VGS = −4 V (Note 2) ⎯ 357 477 m Ω Input capacitance Ciss ⎯ 137 ⎯ Output capacitance Coss ⎯ 39 ⎯ Reverse transfer capacitance Crss VDS = −15 V, VGS = 0, f = 1 MHz ⎯ 20 ⎯ pF Total Gate Charge Qg ⎯ 1.3 ⎯ Gate −Source Charge Qgs ⎯ 0.7 ⎯ Gate −Drain Charge Qgd VDS = −15 V, IDS= −1.7 A VGS = −4 V ⎯ 0.6 ⎯ nC Turn-on time ton ⎯ 15 ⎯ Switching time Turn-off time toff VDD = −15 V, ID = −0.65 A, VGS = 0 to −4 V, RG = 10 Ω ⎯ 14 ⎯ ns Drain–source forward voltage VDSF ID = 1.7 A, VGS = 0 V (Note 3) ⎯ 0.85 1.2 V Note 2: Pulse test Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10 mg (typ.) |
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