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SSM3J305T 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 SSM3J305T
상세설명  Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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SSM3J305T
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J305T
High-Speed Switching Applications
• 4 V drive
• Low ON-resistance:
Ron = 477 mΩ (max) (@VGS = −4 V)
Ron = 237 mΩ (max) (@VGS = −10 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDS
−30
V
Gate–source voltage
VGSS
± 20
V
DC
ID
−1.7
Drain current
Pulse
IDP
−3.4
A
Drain power dissipation
PD (Note 1)
700
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm
× 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V (BR) DSS
ID = −1 mA, VGS = 0
−30
Drain–source breakdown voltage
V (BR) DSX
ID = −1 mA, VGS = + 20 V
−15
V
Drain cutoff current
IDSS
VDS = −30 V, VGS = 0
−1
μA
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0
±1
μA
Gate threshold voltage
Vth
VDS = −5 V, ID = −1 mA
−1.2
−2.6
V
Forward transfer admittance
⏐Yfs
VDS = −5 V, ID =− 0.65 A
(Note 2)
0.8
1.5
S
ID = −0.65 A, VGS = −10 V
(Note 2)
177
237
Drain–source ON-resistance
RDS (ON)
ID = −0.4 A, VGS = −4 V
(Note 2)
357
477
m
Ω
Input capacitance
Ciss
137
Output capacitance
Coss
39
Reverse transfer capacitance
Crss
VDS = −15 V, VGS = 0, f = 1 MHz
20
pF
Total Gate Charge
Qg
1.3
Gate
−Source Charge
Qgs
0.7
Gate
−Drain Charge
Qgd
VDS = −15 V, IDS= −1.7 A
VGS = −4 V
0.6
nC
Turn-on time
ton
15
Switching time
Turn-off time
toff
VDD = −15 V, ID = −0.65 A,
VGS = 0 to −4 V, RG = 10 Ω
14
ns
Drain–source forward voltage
VDSF
ID = 1.7 A, VGS = 0 V
(Note 3)
0.85
1.2
V
Note 2: Pulse test
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)


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