TLP3220

2007-10-01

2

Characteristic

Symbol

Rating

Unit

Forward current

50

mA

Forward current derating (Ta >= 25°C)

−0.5

mA/°C

Reverse voltage

5

V

Junction temperature

125

°C

Off-State output terminal voltage

100

V

On-State current

80

mA

On-State current derating (Ta >= 25°C)

−0.8

mA/°C

Junction temperature

125

°C

Storage temperature range

−40~125

°C

Operating temperature range

−20~85

°C

Lead soldering temperature (10 s)

260

°C

1500

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(Note 1): Device considered a two-terminal device: Pins 1 and 2 shorted together, and pins 3 and 4 shorted together.

Caution

This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and

equipment are earthed.

Recommended Operating Conditions

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Supply voltage

⎯

⎯

80

V

Forward current

10

⎯

30

mA

Operating temperature

25

⎯

60

°C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Forward voltage

1.0

1.15

1.3

V

Reverse current

⎯

⎯

10

μA

Capacitance

V

= 0, f = 1 MHz

⎯

15

⎯

pF

⎯

⎯

200

pA

Off-state current

1

μA

Capacitance

V

= 0, f = 100 MHz, t < 1 s

⎯

6

8

pF