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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SA1201 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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2SA1201 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page  2SA1201 2006-11-09 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −120 V, IE = 0 ― ― −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −0.1 μA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −120 ― ― V Emitter-base breakdown voltage V (BR) EBO IE = −1 mA, IC = 0 −5 ― ― V DC current gain hFE (Note 3) VCE = −5 V, IC = −100 mA 80 ― 240 Collector-emitter saturation voltage VCE (sat) IC = −500 mA, IB = −50 mA ― ― −1.0 V Base-emitter voltage VBE VCE = −5 V, IC = −500 mA ― ― −1.0 V Transition frequency fT VCE = −5 V, IC = −100 mA ― 120 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― ― 30 pF Note 3: hFE classification O: 80 to 160, Y: 120 to 240 Marking D Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator |
유사한 부품 번호 - 2SA1201 |
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유사한 설명 - 2SA1201 |
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