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SSM5G02TU 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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4 / 10 page SSM5G02TU 2007-11-01 4 Schottky Diode Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit VF (1) IF = 0.3 A ⎯ 0.33 0.39 V Forward voltage VF (2) IF = 0.5 A ⎯ 0.37 0.43 V Reverse current IR VR = 12 V ⎯ ⎯ 100 μA Total capacitance CT VR = 0 V, f = 1 MHz ⎯ 80 ⎯ pF Precaution The schottky barrier diode of this product are having large-reverse-current-leakage characteristic compare to the other switching diodes. This current leakage and not proper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design. |
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