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SSM6P09FU 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 SSM6P09FU
상세설명  High Speed Switching Applications
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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SSM6P09FU 데이터시트(HTML) 2 Page - Toshiba Semiconductor

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SSM6P09FU
2007-11-01
2
Marking
Equivalent Circuit
Figure 1:
25.4 mm
× 25.4 mm × 1.6 t,
(top view)
Cu Pad: 0.32 mm2
× 6
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0
±1
μA
Drain-Source breakdown voltage
V (BR) DSS
ID = −1 mA, VGS = 0
−30
V
Drain cut-off current
IDSS
VDS = −30 V, VGS = 0
−1
μA
Gate threshold voltage
Vth
VDS = −5 V, ID = −0.1 mA
−1.1
−1.8
V
Forward transfer admittance
⎪Yfs
VDS = −5 V, ID = −100 mA (Note2)
115
mS
ID = −100 mA, VGS = −10 V (Note2)
2.1
2.7
ID = −100 mA, VGS = −4 V (Note2)
3.3
4.2
Drain-Source ON resistance
RDS (ON)
ID = −100 mA, VGS = −3.3 V(Note2)
4.0
6.0
Ω
Input capacitance
Ciss
VDS = −5 V, VGS = 0, f = 1 MHz
22
pF
Reverse transfer capacitance
Crss
VDS = −5 V, VGS = 0, f = 1 MHz
5
pF
Output capacitance
Coss
VDS = −5 V, VGS = 0, f = 1 MHz
14
pF
Turn-on time
ton
85
Switching time
Turn-off time
toff
VDD = −5 V, ID = −100 mA,
VGS = 0~−4 V
85
ns
Note2:
Pulse test
Switching Time Test Circuit (Q1, Q2 Common)
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for
this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires
lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
(c) VOUT
(b) VIN
ton
90%
10%
−4 V
0 V
90%
10%
toff
tr
tf
VDS (ON)
VDD
VDD = −5 V
Duty <= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta
= 25°C
VDD
OUT
IN
0
−4 V
10
μs
RL
(a) Test circuit
D K
6
5
4
1
2
3
0.4 mm
Q1
Q2
6
5
4
1
2
3


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