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TC74VHCT245AFT 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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TC74VHCT245AFT 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
4 / 9 page TC74VHCT245AF/AFT/AFK 2007-10-01 4 Electrical Characteristics DC Characteristics Test Condition Ta = 25°C Ta = −40 to 85°C Characteristics Symbol VCC (V) Min Typ. Max Min Max Unit High-level input voltage VIH ⎯ 4.5 to 5.5 2.0 ⎯ ⎯ 2.0 ⎯ V Low-level input voltage VIL ⎯ 4.5 to 5.5 ⎯ ⎯ 0.8 ⎯ 0.8 V IOH = −50 μA 4.5 4.4 4.5 ⎯ 4.4 ⎯ High-level output voltage VOH VIN = VIH or VIL IOH = −8 mA 4.5 3.94 ⎯ ⎯ 3.80 ⎯ V IOL = 50 μA 4.5 ⎯ 0.0 0.1 ⎯ 0.1 Low-level output voltage VOL VIN = VIH or VIL IOL = 8 mA 4.5 ⎯ ⎯ 0.36 ⎯ 0.44 V 3-state output off-state current IOZ VIN = VIH or VIL VOUT = VCC or GND 5.5 ⎯ ⎯ ±0.25 ⎯ ±2.50 μA Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA ICC VIN = VCC or GND 5.5 ⎯ ⎯ 4.0 ⎯ 40.0 μA Quiescent supply current ICCT Per input: VIN = 3.4 V Other input: VCC or GND 5.5 ⎯ ⎯ 1.35 ⎯ 1.50 mA Output leakage current IOPD VOUT = 5.5 V 0 ⎯ ⎯ 0.5 ⎯ 5.0 μA AC Characteristics (input: tr = tf = 3 ns) Test Condition Ta = 25°C Ta = −40 to 85°C Characteristics Symbol VCC (V) CL (pF) Min Typ. Max Min Max Unit 15 ⎯ 4.9 7.7 1.0 8.5 Propagation delay time tpLH tpHL ⎯ 5.0 ± 0.5 50 ⎯ 5.4 8.7 1.0 9.5 ns 15 ⎯ 9.4 13.8 1.0 15.0 3-state output enable time tpZL tpZH RL = 1 kΩ 5.0 ± 0.5 50 ⎯ 9.9 14.8 1.0 16.0 ns 3-state output disable time tpLZ tpHZ RL = 1 kΩ 5.0 ± 0.5 50 ⎯ 10.1 15.4 1.0 16.5 ns Output to output skew tosLH tosHL (Note 1) 5.0 ± 0.5 50 ⎯ ⎯ 1.0 ⎯ 1.0 ns Input capacitance CIN DIR, G ⎯ 4 10 ⎯ 10 pF Bus input capacitance CI/O An, Bn ⎯ 13 ⎯ ⎯ ⎯ pF Power dissipation capacitance CPD (Note 2) ⎯ 16 ⎯ ⎯ ⎯ pF Note 1: Parameter guaranteed by design. tosLH = |tpLHm − tpLHn|, tosHL = |tpHLm − tpHLn| Note 2: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD·VCC·fIN + ICC/8 (per bit) |
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