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TC75S59F 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 TC75S59F
상세설명  Single Comparator
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC75S59F 데이터시트(HTML) 2 Page - Toshiba Semiconductor

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TC75S59F/FU/FE
2007-11-01
2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VDD, VSS
±3.5 or 7
V
Differential input voltage
DVIN
±7
V
Input voltage
VIN
VSS~VDD
V
Output current
IO
±35
mA
TC75S59F/FU
200
Power dissipation
TC75S59FE
PD
100
mW
Operating temperature
Topr
−40~85
°C
Storage temperature
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This device’s CMOS structure makes it prone to latch-up. To prevent latch-up, please take the following
precautions:
• Ensure that no I/O pin’s voltage level ever exceeds VDD or drops below VSS.
In addition, check the power-on timing.
• Do not subject the device to excessive noise.


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