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TC75W59FU 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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TC75W59FU 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TC75W59FU/FK 2007-11-01 2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating N Supply voltage VDD, VSS ±3.5 or 7 V Differential input voltage DVIN ±7 V Input voltage VIN VSS~VDD V Output current IO ±35 mA 250 (TC75W59FU) Power dissipation PD 200 (TC75W59FK) mW Operating temperature Topr −40~85 °C Storage temperature Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: Since this product sometimes brings about latchcap, which is peculiar to CMOS devices, note the following points: • Don’t raise the voltage level of I/O pins beyond VDD, nor lower it below VSS. Consider the timing for power supply, too. • Don’t let any abnormal noise enter the device . |
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