전자부품 데이터시트 검색엔진 |
|
SST29VE010-150-3I-W 데이터시트(PDF) 1 Page - Silicon Storage Technology, Inc |
|
SST29VE010-150-3I-W 데이터시트(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 27 page 1 1 Megabit (128K x 8) Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 Data Sheet © 1998 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 304-04 12/97 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the 29EE010 – 3.0V-only for the 29LE010 – 2.7V-only for the 29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V – Standby Current: 10 µA (typical) • Fast Page-Write Operation – 128 Bytes per Page, 1024 Pages – Page-Write Cycle: 5 ms (typical) – Complete Memory Rewrite: 5 sec (typical) – Effective Byte-write Cycle Time: 39 µs (typical) • Fast Read Access Time – 5.0V-only operation: 90 and 120 ns – 3.0V-only operation: 150 and 200 ns – 2.7V-only operation: 200 and 250 ns • Latched Address and Data • Automatic Write Timing – Internal Vpp Generation • End of Write Detection – Toggle Bit – Data# Polling • Hardware and Software Data Protection • TTL I/O Compatibility • JEDEC Standard Byte-wide EEPROM Pinouts • Packages Available – 32-Pin TSOP (8x20 & 8x14 mm) – 32-Lead PLCC – 32 Pin Plastic DIP PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s propri- etary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The 29EE010/ 29LE010/29VE010 write with a single power supply. Internal Erase/Program is transparent to the user. The 29EE010/29LE010/29VE010 conform to JEDEC stan- dard pinouts for byte-wide memories. Featuring high performance page write, the 29EE010/ 29LE010/29VE010 provide a typical byte-write time of 39 µsec. The entire memory, i.e., 128K bytes, can be written page by page in as little as 5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of a write cycle. To protect against inadvertent write, the 29EE010/29LE010/ 29VE010 have on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the 29EE010/ 29LE010/29VE010 are offered with a guaranteed page- write endurance of 104 or 103 cycles. Data retention is rated at greater than 100 years. The 29EE010/29LE010/29VE010 are suited for applica- tions that require convenient and economical updating of program, configuration, or data memory. For all system applications, the 29EE010/29LE010/29VE010 signifi- cantly improve performance and reliability, while lower- ing power consumption, when compared with floppy disk or EPROM approaches. The 29EE010/29LE010/ 29VE010 improve flexibility while lowering the cost for program, data, and configuration storage applications. To meet high density, surface mount requirements, the 29EE010/29LE010/29VE010 are offered in 32-pin TSOP and 32-lead PLCC packages. A 600-mil, 32-pin PDIP package is also available. See Figures 1 and 2 for pinouts. Device Operation The SST page mode EEPROM offers in-circuit electrical write capability. The 29EE010/29LE010/29VE010 does not require separate erase and program operations. The internally timed write cycle executes both erase and program transparently to the user. The 29EE010/ 29LE010/29VE010 have industry standard optional Software Data Protection, which SST recommends al- ways to be enabled. The 29EE010/29LE010/29VE010 are compatible with industry standard EEPROM pinouts and functionality. Read The Read operations of the 29EE010/29LE010/ 29VE010 are controlled by CE# and OE#, both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the |
유사한 부품 번호 - SST29VE010-150-3I-W |
|
유사한 설명 - SST29VE010-150-3I-W |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |