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TLP131 데이터시트(PDF) 3 Page - Toshiba Semiconductor

부품명 TLP131
상세설명  Photo−Transistor Office Machine
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TLP131 데이터시트(HTML) 3 Page - Toshiba Semiconductor

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TLP131
2007-10-01
3
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC
5
48
V
Forward current
IF
16
25
mA
Collector current
IC
1
10
mA
Operating temperature
Topr
−25
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
10
μA
Capacitance
CT
V = 0, f = 1 MHz
30
pF
Collector
−emitter
breakdown voltage
V(BR)CEO
IC = 0.5mA
80
V
Emitter
−collector
breakdown voltage
V(BR)ECO
IE = 0.1mA
7
V
Collector
−base breakdown voltage
V(BR)CBO
IC = 0.1mA
80
V
Emitter
−base breakdown voltage
V(BR)EBO
IE = 0.1mA
7
V
VCE = 48V
10
100
nA
collector dark current
ICEO
VCE = 48V,Ta = 85°C
2
50
μA
Collector dark current
ICER
VCE = 48V,Ta = 85°C
RBE = 1MΩ
0.5
10
μA
Collector dark current
ICBO
VCB = 10V
0.1
nA
DC forward current gain
hFE
VCE = 5V,IC = 0.5mA
400
Capacitance (collector to emitter)
CCE
V = 0, f = 1MHz
10
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
50
600
Current transfer ratio
IC / IF
IF = 5 mA, VCE = 5 V
Rank GB
100
600
%
60
Saturated CTR
IC / IF (sat)
IF = 1 mA, VCE = 0.4 V
Rank GB
30
%
Base photo
−current
IPB
IF = 5mA,VCB = 5V
10
μA
IC = 2.4 mA, IF = 8 mA
0.4
0.2
Collector
−emitter
saturation voltage
VCE (sat)
IC = 0.2 mA, IF = 1 mA
Rank GB
0.4
V
Off
−state collector current
IC (off)
IF = 0.7mA, VCE = 48 V
1
10
μA


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