2N3019 datasheet(2/4 Pages) STMICROELECTRONICS

부품명	2N3019

상세설명	HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

35

219

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 90 V

Tcase = 150

o C

10

nA

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

10

nA

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = 100

µA

140

V

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = 10 mA

80

V

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 100

µA7

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 150 mA

IB = 15 mA

IC = 500 mA

IB = 50 mA

0.2

0.5

V

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 150 mA

IB = 15 mA

1.1

V

hFE

∗

DC Current Gain

IC = 0.1 mA

VCE = 10 V

IC = 10 mA

VCE = 10 V

IC = 150 mA

VCE = 10 V

IC = 500 mA

VCE = 10 V

IC = 1A

VCE = 10 V

IC = 150 mA

VCE = 10 V

Tamb = -55

oC

50

90

100

50

15

40

300

hfe

∗

Small Signal Current

Gain

IC = 1 mA

VCE = 5 V

f = 1KHz

80

400

fT

Transition Frequency

IC = 50 mA

VCE = 10 V f = 20MHz

100

MHz

CCBO

Collector Base

Capacitance

IE = 0

VCB = 10 V

f = 1MHz

12

pF

CEBO

Emitter Base

Capacitance

IC = 0

VEB = 0.5 V

f = 1MHz

60

pF

NF

Noise Figure

IC = 0.1 mA

VCE = 10 V

f = 1KHz

Rg = 1K

Ω

4dB

rbb’ Cb’c

Feedback Time

Constant

IC = 10 mA

VCE = 10 V

f = 4MHz

400

ps

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %

2N3019

2/4

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