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BAP64LX 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BAP64LX 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 8 page BAP64LX_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 29 June 2007 3 of 8 NXP Semiconductors BAP64LX Silicon PIN diode Lins insertion loss see Figure 4;IF = 0.5 mA; f = 900 MHz - 1.22 - dB f = 1800 MHz - 1.21 - dB f = 2450 MHz - 1.22 - dB Lins insertion loss see Figure 4;IF = 1 mA; f = 900 MHz - 0.22 - dB f = 1800 MHz - 0.23 - dB f = 2450 MHz - 0.24 - dB Lins insertion loss see Figure 4;IF =10mA; f = 900 MHz - 0.12 - dB f = 1800 MHz - 0.14 - dB f = 2450 MHz - 0.15 - dB Lins insertion loss see Figure 4;IF = 100 mA; f = 900 MHz - 0.09 - dB f = 1800 MHz - 0.10 - dB f = 2450 MHz - 0.11 - dB τL charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR =3mA - 1.0 - µs LS series inductance IF = 100 mA; f = 100 MHz - 0.4 - nH Table 6. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit f = 1 MHz; Tj =25 °C. f = 100 MHz; Tj =25 °C. Fig 1. Diode capacitance as a function of reverse voltage; typical values Fig 2. Forward resistance as a function of forward current; typical values 001aag637 VR (V) 020 16 812 4 200 300 100 400 500 Cd (fF) 0 001aag638 IF (mA) 10−1 102 10 1 10 1 102 rD ( Ω) 10−1 |
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