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BTA04A 데이터시트(PDF) 1 Page - STMicroelectronics |
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1 / 5 page BTA04 T/D/S/A BTB04 T/D/S/A March 1995 SENSITIVE GATE TRIACS Symbol Parameter Value Unit IT(RMS) RMS on-state current (360 ° conduction angle) BTA Tc = 90 °C4 A BTB Tc = 95 °C ITSM Non repetitive surge peak on-state current ( Tj initial = 25 °C) tp = 8.3 ms 42 A tp = 10 ms 40 I2tI2t value tp = 10 ms 8 A2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 50mA diG/dt = 0.1A/µs Repetitive F = 50 Hz 10 A/ µs Non Repetitive 50 Tstg Tj Storage and operating junction temperature range - 40 to + 150 - 40 to + 110 °C °C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 °C TO220AB (Plastic) A1 A2 G . VERY LOW IGT = 10mA max . LOW IH = 15mA max . BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION Symbol Parameter BTA / BTB04- Unit 400 T/D/S/ A 600 T/D/S/A 700 T/D/S/A VDRM VRRM Repetitive peak off-state voltage Tj = 110 °C 400 600 700 V ABSOLUTE RATINGS (limiting values) FEATURES The BTA/BTB04 T/D/S/A triac family are high per- formance glass passivated PNPN devices. These parts are suitables for general purpose ap- plications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. 1/5 |
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