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BU808DFI 데이터시트(PDF) 2 Page - STMicroelectronics |
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BU808DFI 데이터시트(HTML) 2 Page - STMicroelectronics |
2 / 7 page THERMAL DATA Rthj-ca se Thermal Resistance Junction-case Max 2.4 oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ICES Collector Cut -of f Current (VBE =0) VCE = 1400 V 400 µA IEBO Emitt er Cut -of f Current (IC =0) VEB =5 V 100 mA VCE(sat) ∗ Collector-Emitter Saturation Voltage IC =5 A IB =0.5 A 1.6 V VBE(s at) ∗ Base-Emitter Saturation Voltage IC =5 A IB =0.5 A 2.1 V hFE ∗ DC Current Gain IC =5 A VCE =5 V IC =5 A VCE =5 V Tj =100 oC 60 20 230 ts tf INDUCTIVE LO AD St orage Time Fall Time VCC =150 V IC =5 A IB1 =0.5 A VBEoff =-5 V 3 0.8 µs µs ts tf INDUCTIVE LO AD St orage Time Fall Time VCC =150 V IC =5 A IB1 =0.5 A VBEoff =-5 V Tj =100 oC 2 0.8 µs µs VF Diode F orward Voltage IF =5 A 3 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance BU808DFI 2/7 |
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