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SST29EE010A-200-4I-WH 데이터시트(PDF) 9 Page - Silicon Storage Technology, Inc |
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SST29EE010A-200-4I-WH 데이터시트(HTML) 9 Page - Silicon Storage Technology, Inc |
9 / 26 page 9 © 1999 Silicon Storage Technology, Inc. 303-01 2/99 1 Megabit Page Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 TABLE 8: CAPACITANCE (Ta = 25 °C, f=1 MHz, other pins open) Parameter Description Test Condition Maximum CI/O(1) I/O Pin Capacitance VI/O = 0V 12 pF CIN(1) Input Capacitance VIN = 0V 6 pF Note: (1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 303 PGM T8.0 TABLE 9: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND Endurance 10,000 Cycles JEDEC Standard A117 TDR(1) Data Retention 100 Years JEDEC Standard A103 VZAP_HBM(1) ESD Susceptibility 2000 Volts JEDEC Standard A114 Human Body Model VZAP_MM(1) ESD Susceptibility 200 Volts JEDEC Standard A115 Machine Model ILTH(1) Latch Up 100 mA JEDEC Standard 78 Note: (1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 303 PGM T9.2 TABLE 7: POWER-UP TIMINGS Symbol Parameter Maximum Units TPU-READ(1) Power-up to Read Operation 100 µs TPU-WRITE(1) Power-up to Write Operation 5 ms 303 PGM T7.0 |
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