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BTA2008-600E 데이터시트(PDF) 8 Page - NXP Semiconductors |
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BTA2008-600E 데이터시트(HTML) 8 Page - NXP Semiconductors |
8 / 12 page BTA2008_SER_D_E_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 18 January 2008 8 of 12 NXP Semiconductors BTA2008 series D and E 0.8 A Three-quadrant triacs high commutation Vo = 0.835 V Rs = 0.5 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature Fig 11. Normalized holding current as a function of junction temperature 003aac114 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 VT (V) IT (A) (1) (2) (3) Tj (°C) −50 150 100 050 001aab100 1 2 3 0 IL IL(25°C) Tj (°C) −50 150 100 050 001aab099 1 2 3 0 IH IH(25°C) |
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