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FPD3000SOT89 데이터시트(PDF) 1 Page - Filtronic Compound Semiconductors

부품명 FPD3000SOT89
상세설명  LOW NOISE HIGH LINEARITY PACKAGED PHEMT
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제조업체  FILTRONIC [Filtronic Compound Semiconductors]
홈페이지  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FPD3000SOT89 데이터시트(HTML) 1 Page - Filtronic Compound Semiconductors

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LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
1
FPD3000SOT89
Datasheet v3.0
PACKAGE:
YPICAL
APPLICATIONS:
in PCS/Cellular
nd other types
FEATURES (1850MHZ):
30 dBm Output Power (P1dB)
13 dB Small-Signal Gain (SSG)
1.3 dB Noise Figure
45 dBm Output IP3
45% Power-Added Efficiency
FPD3000SOT89E: RoHS compliant
(Directive 2002/95/EC)
GENERAL DESCRIPTION:
The FPD3000SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 µm x 3000 µm Schottky barrier
Gate, defined by high-resolution stepper-
based photolithography. The double recessed
Gate structure minimizes parasitics to optimize
performance, with an epitaxial structure
designed for improved linearity over a range of
bias conditions and i/p power levels.
RoHS
T
Drivers or output stages
base station transmitter amplifiers
High intercept-point LNAs
WLL and WLAN systems, a
of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Power at 1dB Gain Compression
P1dB
VDS = 5 V; IDS = 50% IDSS
29
30
dBm
Small-Signal Gain
SSG
VDS = 5 V; IDS = 50% IDSS
11.5
13
dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
45
%
Noise Figure
NF
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
1.3
0.9
dB
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
IP3
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
42
45
dBm
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
750
930
1100
mA
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS
≅ +1 V
1.5
mA
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
800
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
2
20
µA
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 3 mA
0.7
1.0
1.3
V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 3 mA
12
16
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 3 mA
12
16
V
Thermal Resistance
R
θJC
35
°C/W
Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)


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