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L6208D 데이터시트(PDF) 9 Page - STMicroelectronics |
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L6208D 데이터시트(HTML) 9 Page - STMicroelectronics |
9 / 27 page 9/27 L6208 Figure 5. Overcurrent Detection Timing Definition CIRCUIT DESCRIPTION POWER STAGES and CHARGE PUMP The L6208 integrates two independent Power MOS Full Bridges. Each Power MOS has an RDS(ON) = 0.3 Ω (typ- ical value @ 25°C), with intrinsic fast freewheeling diode. Switching patterns are generated by the PWM Current Controller and the Phase Sequence Generator (see below). Cross conduction protection is achieved using a dead time (tDT = 1 µs typical value) between the switch off and switch on of two Power MOSFETSs in one leg of a bridge. Pins VSA and VSB MUST be connected together to the supply voltage VS. The device operates with a supply voltage in the range from 8V to 52V. It has to be noticed that the RDS(ON) increases of some percents when the supply voltage is in the range from 8V to 12V (see Fig. 34 and 35). Using N-Channel Power MOS for the upper transistors in the bridge requires a gate drive voltage above the power supply voltage. The bootstrapped supply voltage VBOOT is obtained through an internal Oscillator and few external components to realize a charge pump circuit as shown in Figure 6. The oscillator output (VCP) is a square wave at 600KHz (typical) with 10V amplitude. Recommended values/part numbers for the charge pump circuit are shown in Table 1. Table 1. Charge Pump External Components Values CBOOT 220nF CP 10nF RP 100 Ω D1 1N4148 D2 1N4148 ISOVER 90% 10% IOUT VEN tOCD(OFF) tOCD(ON) D02IN1399 ON OFF BRIDGE |
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