40N60SCD1_03 datasheet(1/2 Pages) IXYS

부품명	40N60SCD1

상세설명	CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PACTM

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제조업체	IXYS [IXYS Corporation]

홈페이지	http://www.ixys.com

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IXKF 40N60SCD1

CoolMOS Power MOSFET

with Series Schottky Diode and

Ultra Fast Antiparallel Diode

in High Voltage ISOPLUS i4-PACTM

Features

• fast CoolMOS power MOSFET- 3rd generation

- High blocking voltage

- Low on resistance

- Low thermal resistance due to reduced

chip thickness

• Series Schottky diode prevents current

flow through MOSFET’s body diode

- very low forward voltage

- fast switching

• Ultra fast HiPerFREDTM anti parallel diode

- low operating forward voltage

- fast and soft reverse recovery - low switching

losses

• ISOPLUS i4-PACTM high voltage package

- isolated back surface

- low coupling capacity between pins and

heatsink

- enlarged creepage towards heatsink

- enlarged creepage between high voltage pins

- application friendly pinout

- high reliability

- industry standard outline

- UL registered E 72873

Applications

Converters with

• circuit operation leading to current flow

through switches in reverse direction - e. g.

- phaseleg with inductive load

- resonant circuits

• high switching frequency

Examples

• switched mode power supplies (SMPS)

• uninterruptable power supplies (UPS)

• DC-DC converters

• welding converters

• converters for inductive heating

• drive converters

CoolMOS is a trademark of

Infineon Technologies AG.

IXYS reserves the right to change limits, test conditions and dimensions.

I

D25

= 38 A

V

DSS

= 600 V

R

DSon = 60 m

Ω

t

rr

= 70 ns

MOSFET T

Symbol

Conditions

Maximum Ratings

V

DSS

T

VJ = 25°C to 150°C

600

V

GS

±20

V

I

D25

T

C = 25°C

38

A

I

D90

T

C = 90°C

25

A

Symbol

Conditions

Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.

typ.

max.

R

DSon

V

GS = 10 V; ID = ID90

60

70 m

Ω

V

GSth

V

DS = 20 V; ID = 3 mA;

2.1

3.9

V

I

DSS

V

DS = VDSS; VGS = 0 V; TVJ =

25°C

0.3 mA

T

VJ = 125°C

0.5

mA

I

GSS

V

GS = ±20 V; VDS = 0 V

100

nA

Q

g

250

nC

Q

gs

25

nC

Q

gd

120

nC

t

d(on)

20

ns

t

r

30

ns

t

d(off)

110

ns

t

f

10

ns

R

thJC

0.45 K/W

R

thJH

with heat transfer paste

0.9

K/W

V

GS= 10 V; VDS = 350 V; ID = 50 A

V

GS= 10 V; VDS = 380 V;

I

D = 50 A; RG = 1.8 Ω

Preliminary data

E 72873

유사한 부품 번호 - 40N60SCD1_03

제조업체	부품명	데이터시트	상세설명
IXYS Corporation	40N60	91Kb / 6P	Low VCE(sat) IGBT, High Speed IGBT
Fairchild Semiconductor	40N60A4D	152Kb / 10P	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
ON Semiconductor	40N60FL	247Kb / 9P	IGBT July, 2013 ??Rev. 0

More results

유사한 설명 - 40N60SCD1_03

제조업체	부품명	데이터시트	상세설명
IXYS Corporation	IXKF40N60SCD1	34Kb / 2P	CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC
	IXFF24N100	72Kb / 2P	HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM
	L468	45Kb / 2P	Dual HiPerFREDTM Epitaxial Diode in ISOPLUS i4-PACTM
	FID35-06C	48Kb / 2P	Fast IGBT Chopper in ISOPLUS i4-PACTM
	FII30-12D	47Kb / 2P	Fast IGBT Chopper in ISOPLUS i4-PACTM
	FMM75-01F	46Kb / 2P	HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM
	FID36-06D	47Kb / 2P	IGBT Chopper in ISOPLUS i4-PACTM
	FUE30-12N1	66Kb / 3P	Fast Three Phase Rectifier Bridge in ISOPLUS i4-PACTM
	FUS45-0045B	36Kb / 1P	Schottky Three Phase Rectifier Bridge in ISOPLUS i4-PACTM
	FUO22-12N	32Kb / 2P	Three Phase Rectifier Bridge in ISOPLUS i4-PACTM

More results

40N60SCD1 데이터시트(PDF) 1 Page - IXYS Corporation

40N60SCD1 데이터시트(HTML) 1 Page - IXYS Corporation

유사한 부품 번호 - 40N60SCD1_03

유사한 설명 - 40N60SCD1_03

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