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SST39WF400A 데이터시트(PDF) 1 Page - Silicon Storage Technology, Inc

부품명 SST39WF400A
상세설명  4 Mbit (x16) Multi-Purpose Flash
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제조업체  SST [Silicon Storage Technology, Inc]
홈페이지  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST39WF400A 데이터시트(HTML) 1 Page - Silicon Storage Technology, Inc

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©2003 Silicon Storage Technology, Inc.
S71220-04-000
11/03
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
FEATURES:
Organized as 256K x16
Single Voltage Read and Write Operations
– 1.65-1.95V
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 1 µA (typical)
Sector-Erase Capability
– Uniform 2 KWord sectors
Block-Erase Capability
– Uniform 32 KWord blocks
Fast Read Access Time
– 90 ns
– 100 ns
Latched Address and Data
Fast Erase and Word-Program
– Sector-Erase Time: 36 ms (typical)
– Block-Erase Time: 36 ms (typical)
– Chip-Erase Time: 140 ms (typical)
– Word-Program Time: 28 µs (typical)
Automatic Write Timing
– Internal VPP Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 48-ball TFBGA (6mm x 8mm)
– 48-ball WFBGA (4mm x 6mm) Micro-Package
– 48-bump XFLGA (4mm x 6mm) Micro-Package
PRODUCT DESCRIPTION
The SST39WF400A device is a 256K x16 CMOS Multi-
Purpose Flash (MPF) manufactured with SST’s proprietary,
high performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST39WF400A writes (Pro-
gram or Erase) with a 1.65-1.95V power supply. This
device conforms to JEDEC standard pin assignments for
x16 memories.
Featuring
high-performance
Word-Program,
the
SST39WF400A device provides a typical Word-Program
time of 28 µsec. The device uses Toggle Bit or Data# Poll-
ing to detect the completion of the Program or Erase opera-
tion. To protect against inadvertent writes, it has on-chip
hardware
and
software
data
protection
schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, this device is offered with a guaranteed typical
endurance of 100,000 cycles. Data retention is rated at
greater than 100 years.
The SST39WF400A device is suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
it significantly improves performance and reliability, while
lowering power consumption. It inherently uses less energy
during Erase and Program than alternative flash technolo-
gies. When programming a flash device, the total energy
consumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash technologies. These devices also improve flexibility
while lowering the cost for program, data, and configuration
storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet surface mount requirements, the SST39WF400A
is offered in both a 48-ball TFBGA package and 48-ball
Micro-Packages. See Figures 1 and 2 for pin assignments.
4 Mbit (x16) Multi-Purpose Flash
SST39WF400A
SST39WF400A1.8V 4Mb (x16) MPF memory


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