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SST39WF400A-90-4I-C1Q 데이터시트(PDF) 10 Page - Silicon Storage Technology, Inc |
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SST39WF400A-90-4I-C1Q 데이터시트(HTML) 10 Page - Silicon Storage Technology, Inc |
10 / 26 page 10 Data Sheet 4 Mbit Multi-Purpose Flash SST39WF400A ©2003 Silicon Storage Technology, Inc. S71220-04-000 11/03 TABLE 8: DC OPERATING CHARACTERISTICS VDD = 1.65-1.95V1 Symbol Parameter Limits Test Conditions Min Max Units IDD Power Supply Current Address input=VILT/VIHT, at f=5 MHz, VDD=VDD Max Read 15 mA CE#=VIL, OE#=WE#=VIH, all I/Os open Program and Erase 20 mA CE#=WE#=VIL, OE#=VIH ISB Standby VDD Current 5 µA CE#=VDD, VDD=VDD Max ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 1 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.2VDD VDD=VDD Min VIH Input High Voltage 0.8VDD VVDD=VDD Max VOL Output Low Voltage 0.1 V IOL=100 µA, VDD=VDD Min VOH Output High Voltage VDD-0.1 V IOH=-100 µA, VDD=VDD Min T8.1 1220 1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C (room temperature), and VDD = 1.8V. Not 100% tested. TABLE 9: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Program/Erase Operation 100 µs T9.0 1220 TABLE 10: CAPACITANCE (Ta = 25°C, f=1 MHz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T10.0 1220 TABLE 11: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1,2 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a higher minimum specification. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T11.0 1220 |
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