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Q1NK60ZR 데이터시트(PDF) 2 Page - Microsemi Corporation

부품명 Q1NK60ZR
상세설명  N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

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Electrical ratings
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
2/14
Rev 7
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
IPAK
TO-92
SOT-223
VDS
Drain-Source Voltage (VGS = 0)
600
V
VDGR
Drain-Gate Voltage (RGS = 20KΩ)600
V
VGS
Gate-Source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
0.8
0.3
0.3
A
ID
Drain Current (continuous) at TC=100°C
0.5
0.189
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain Current (pulsed)
3.2
1.2
A
PTOT
Total Dissipation at TC = 25°C
25
3
3.3
W
Derating Factor
0.24
0.25
0.26
W/°C
VESD(G-D)
Gate source ESD(HBM-C=100pF, R=1.5K
Ω)
800
V
dv/dt(2)
2.
ISD ≤0.3A, di/dt ≤200A/µs, VDD =80%V(BR)DSS
Peak Diode Recovery voltage slope
4.5
V/ns
TJ
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
IPAK
TO-92
SOT-223
Rthj-case
Thermal resistance junction-case Max
5
--
--
°C/W
Rthj-a
Thermal resistance junction-ambient Max
100
120
37.87(1)
1.
When mounted on 1 inch² FR-4 board, 2 Oz Cu
°C/W
Rthj-lead
Thermal resistance junction-lead Max
--
40
--
°C/W
Tl
Maximum lead temperature for soldering
purpose
275
260
°C
Table 3.
Avalanche data
Symbol
Parameter
Value
Unit
IAR
Avalanche Curent, Repetitive or Noy-Repetitive
(pulse width limited by Tj Max)
0.8
A
EAS
Single pulse avalanche Energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
60
mJ


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