IRFB3806PBF datasheet(4/11 Pages) IRF

부품명	IRFB3806PBF

상세설명	HEXFETPower MOSFET

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제조업체	IRF [International Rectifier]

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IRFB/S/SL3806PbF

4

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Fig 8. Maximum Safe Operating Area

Fig 10. Drain-to-Source Breakdown Voltage

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 11. Typical COSS Stored Energy

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 12. Maximum Avalanche Energy vs. DrainCurrent

0.0

0.5

1.0

1.5

2.0

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

TJ = 25°C

TJ = 175°C

VGS = 0V

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Temperature ( °C )

60

65

70

75

80

Id = 5mA

-10

0

10

20

30

40

50

60

70

VDS, Drain-to-Source Voltage (V)

0.0

0.1

0.2

0.3

0.4

25

50

75

100

125

150

175

Starting TJ , Junction Temperature (°C)

0

50

100

150

200

250

300

ID

TOP

2.8A

5.1A

BOTTOM 25A

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

OPERATION IN THIS AREA

LIMITED BY RDS(on)

Tc = 25°C

Tj = 175°C

Single Pulse

100µsec

1msec

10msec

DC

25

50

75

100

125

150

175

TC , Case Temperature (°C)

0

5

10

15

20

25

30

35

40

45

유사한 부품 번호 - IRFB3806PBF

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRFB3806PBF	570Kb / 11P	High Efficiency Synchronous Rectification in SMPS

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