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SI6435ADQ 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SI6435ADQ 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Vishay Siliconix Si6435ADQ Document Number: 71104 S-80682-Rev. B, 31-Mar-08 www.vishay.com 1 P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) - 30 0.030 at VGS = - 10 V ± 5.5 0.055 at VGS = - 4.5 V ± 4.1 Si6435ADQ D S S G 1 2 3 4 8 7 6 5 D S S D TSSOP-8 Top View Ordering Information: Si6435ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) S* G D P-Channel MOSFET * Source Pins 2, 3, 6 and 7 must be tied common. Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID ± 5.5 ± 4.7 A TA = 70 °C ± 4.5 ± 3.7 Pulsed Drain Current (10 µs Pulse Width) IDM ± 30 Continuous Source Current (Diode Conduction)a IS - 1.35 - 0.95 Maximum Power Dissipationa TA = 25 °C PD 1.5 1.05 W TA = 70 °C 1.0 0.67 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 65 83 °C/W Steady State 100 120 Maximum Junction-to-Foot (Drain) Steady State RthJF 43 52 RoHS COMPLIANT |
유사한 부품 번호 - SI6435ADQ_08 |
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유사한 설명 - SI6435ADQ_08 |
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