SI2301BDS datasheet(2/6 Pages) VISHAY

부품명	SI2301BDS

상세설명	P-Channel 2.5-V (G-S) MOSFET

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Document Number: 72066

S-80427-Rev. D, 03-Mar-08

Vishay Siliconix

Si2301BDS

Notes:

a. Pulse test: pulse width

≤ 300 µs duty cycle ≤ 2 %.

b. For DESIGN AID ONLY, not subject to production testing.

c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Limits

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 20

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.45

- 0.95

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

- 1

µA

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS ≤ - 5 V, VGS = - 4.5 V

- 6

A

VDS ≤ - 5 V, VGS = - 2.5 V

- 3

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 2.8 A

0.080

0.100

Ω

VGS = - 2.5 V, ID = - 2.0 A

0.110

0.150

Forward Transconductancea

gfs

VDS = - 5 V, ID = - 2.8 A

6.5

S

Diode Forward Voltage

VSD

IS = - 0.75 A, VGS = 0 V

- 0.80

- 1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = - 6 V, VGS = - 4.5 V

ID ≅ - 2.8 A

4.5

10

nC

Gate-Source Charge

Qgs

0.7

Gate-Drain Charge

Qgd

1.1

Input Capacitance

Ciss

VDS = - 6 V, VGS = 0 V, f = 1 MHz

375

pF

Output Capacitance

Coss

95

Reverse Transfer Capacitance

Crss

65

Switchingc

Turn-On Time

td(on)

VDD = - 6 V, RL = 6 Ω

ID ≅ - 1.0 A, VGEN = - 4.5 V

Rg = 6 Ω

20

30

ns

tr

40

60

Turn-Off Time

td(off)

30

45

tf

20

30

유사한 부품 번호 - SI2301BDS

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI2301BDS	59Kb / 5P	P-Channel 2.5-V (G-S) MOSFET Rev. B, 13-Oct-03
	SI2301BDS	213Kb / 9P	P-Channel 2.5 V (G-S) MOSFET Rev. F, 17-Oct-11
	SI2301BDS	213Kb / 9P	P-Channel 2.5 V (G-S) MOSFET Rev. F, 17-Oct-11
Guangdong Kexin Industr...	SI2301BDS	1Mb / 5P	P-Channel Enhancement MOSFET
Vishay Siliconix	SI2301BDS	180Kb / 8P	P-Channel 2.5 V (G-S) MOSFET 01-Jan-2022

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유사한 설명 - SI2301BDS

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI2301ADS	39Kb / 4P	P-Channel 2.5-V (G-S) MOSFET Rev. B, 29-Apr-02
	SI4493DY	44Kb / 5P	P-Channel 2.5-V (G-S) MOSFET Rev. A, 07-Jul-03
	SI6433BDQ-T1-GE3	209Kb / 11P	P-Channel 2.5-V (G-S) MOSFET Rev. C, 31-Mar-08
Guangdong Kexin Industr...	KI1303EDL	60Kb / 2P	P-Channel 2.5-V (G-S) MOSFET
Vishay Siliconix	SI3443BDV	210Kb / 10P	P-Channel 2.5-V (G-S) MOSFET Rev. C, 20-Apr-09
	SI2301BDS	180Kb / 8P	P-Channel 2.5 V (G-S) MOSFET 01-Jan-2022
	SI3443DV-T1	64Kb / 5P	P-Channel 2.5-V (G-S) MOSFET Rev. B, 29-Sep-97
	SI2301BDS-T1-GE3	213Kb / 9P	P-Channel 2.5 V (G-S) MOSFET Rev. F, 17-Oct-11
	SI3441DV-T1	52Kb / 5P	P-Channel 2.5-V (G-S) MOSFET Rev. G, 01-Apr-02
	SI6433BDQ	100Kb / 6P	P-Channel 2.5-V (G-S) MOSFET Rev. C, 31-Mar-08
	SI1403BDL	130Kb / 6P	P-Channel 2.5-V (G-S) MOSFET S-71951-Rev. B, 10-Sep-07

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SI2301BDS 데이터시트(PDF) 2 Page - Vishay Siliconix

SI2301BDS 데이터시트(HTML) 2 Page - Vishay Siliconix

유사한 부품 번호 - SI2301BDS

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