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M27256-3F1 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 M27256-3F1
상세설명  NMOS 512K 64K x 8 UV EPROM
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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For the most efficient use of these two control lines,
E should be decoded and used as the primary
device selecting function, while GVPP should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all dese-
lected memory devices are in their low power
standby mode and that the output pins are only
active when data is required from a particular mem-
ory device.
System Considerations
The power switching characteristics of fast
EPROMs require careful decoupling of the devices.
The supply current, ICC, has three segments that
are of interest to the system designer : the standby
current level, the active current level, and transient
current peaks that are produced by the falling and
rising edges of E. The magnitude of the transient
current peaks is dependent on the capacitive and
inductive loading of the device at the output. The
associated transient voltage peaks can be sup-
pressed by complying with the two line output
control and by properly selected decoupling ca-
pacitors. It is recommenced that a 1
µF ceramic
capacitor be used on every device between VCC
and VSS. This should be a high frequency capacitor
of low inherent inductance and should be placed
as close to the device as possible. In addition, a
4.7
µF bulk electrolytic capacitor should be used
between VCC and VSS for every eight devices. The
bulk capacitor should be located near the power
supply connection point. The purpose of the bulk
capacitor is to overcome the voltage drop caused
by the inductive effects of PCB traces.
Programming
When delivered, and after each erasure, all bits of
the M27512 are in the “1" state. Data is introduced
by selectively programming ”0s" into the desired bit
locations. Although only “0s” will be programmed,
both “1s” and “0s” can be present in the data word.
The only way to change a “0" to a ”1" is by ultraviolet
light erasure. The M27512 is in the programming
mode when GVPP input is at 12.5V and E is at
TTL-low. The data to be programmed is applied 8
bits in parallel to the data output pins. The levels
required for the address and data inputs are TTL.
The M27512 can use PRESTO Programming Algo-
rithm that drastically reduces the programming
time (typically less than 50 seconds). Nevertheless
to achieve compatibility with all programming
equipment, the standard Fast Programming Algo-
rithm may also be used.
Fast Programming Algorithm
Fast Programming Algorithm rapidly programs
M27512 EPROMs using an efficient and reliable
method suited to the production programming en-
vironment. Programming reliability is also ensured
as the incremental program margin of each byte is
continually monitored to determine when it has
been successfully programmed. A flowchart of the
M27512 Fast Programming Algorithm is shown in
Figure 8.
Mode
E
GVPP
A9
Q0 - Q7
Read
VIL
VIL
X
Data Out
Output Disable
VIL
VIH
X
Hi-Z
Program
VIL Pulse
VPP
X
Data In
Verify
VIH
VIL
X
Data Out
Program Inhibit
VIH
VPP
X
Hi-Z
Standby
VIH
X
X
Hi-Z
Electronic Signature
VIL
VIL
VID
Codes
Note: X = VIH or VIL, VID = 12V
± 0.5%.
Table 3. Operating Modes
Identifier
A0
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
Hex Data
Manufacturer’s Code
VIL
00100
00
0
20h
Device Code
VIH
00001
10
1
0Dh
Table 4. Electronic Signature
DEVICE OPERATION (cont’d)
M27512
3/11


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