M27W016-110M1T datasheet(10/26 Pages) STMICROELECTRONICS

부품명	M27W016-110M1T

상세설명	16 Mbit 1Mb x16 3V Supply FlexibleROMTM Memory

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M27W016

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Start Address), that indicates to the PC that the

Program Phase has to continue. A0 to A16 are

‘don’t care’.

3. Finally, after all Words have been programmed,

a Bus Write operation (the (n+1)th) with a Final

Address, FA (A17 or a higher address pin

different from the Start Address), ends the

Program Phase.

The memory is now set to enter the Verify Phase.

Verify Phase. The Verify Phase is similar to the

Program Phase in that all Words must be resent to

the memory for them to be checked against the

programmed data.

Before any Bus Write Operation of the Verify

Phase, the Status Register must be read in order

to check that the PC is ready for the next operation

or if the reprogram of the location has failed (see

Table 6 and Figure 8).

Three successive steps are required to execute

the Verify Phase of the command:

1. The first Bus Write operation of the Verify Phase

latches the Start Address and the Word to be

verified.

2. Each subsequent Bus Write operation latches

the next Word to be verified and automatically

increments the internal Address Bus. As in the

Program Phase, it is not necessary to provide

the address of the location to be programmed

but only a Continue Address, CA (A17 to A19

equal to the Start Address).

3. Finally, after all Words have been verified, a Bus

Write cycle with a Final Address, FA (A17 or a

higher address pin different from the Start

Address) ends the Verify Phase.

Exit Phase. After the Verify Phase ends, the Sta-

tus Register must be read to check if the command

has successfully completed or not (see Table 6

and Figure 8).

If the Verify Phase is successful, the memory re-

turns to Read mode and DQ6 stops toggling.

If the PC fails to reprogram a given location, the

Verify Phase terminates, DQ6 continues toggling

and error bit DQ5 is set in the Status Register. If

the error is due to a VPP failure DQ4 is also set.

When the operation fails a Read/Reset command

must be issued to return the device to Read mode.

During the Multiple Word Program operation the

memory will ignore all commands. It is not possible

to issue any command to abort or pause the oper-

ation. Typical program times are given in Table 5.

Bus Read operations during the program opera-

tion will output the Status Register on the Data In-

puts/Outputs. See the section on the Status

Register for more details.

Note that the Multiple Word Program command

cannot change a bit set to ’0’ back to ’1’.

유사한 부품 번호 - M27W016-110M1T

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	M27W032	365Kb / 23P	32 Mbit 2Mb x16 3V Supply FlexibleROM??Memory
	M27W032-100M1T	365Kb / 23P	32 Mbit 2Mb x16 3V Supply FlexibleROM??Memory
	M27W032-100N1T	365Kb / 23P	32 Mbit 2Mb x16 3V Supply FlexibleROM??Memory
	M27W032-110M1T	365Kb / 23P	32 Mbit 2Mb x16 3V Supply FlexibleROM??Memory
	M27W032-110N1T	365Kb / 23P	32 Mbit 2Mb x16 3V Supply FlexibleROM??Memory

More results

유사한 설명 - M27W016-110M1T

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	M28W160ECT	860Kb / 50P	16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
	M28W160CT	1,022Kb / 50P	16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
	M28W160BT	337Kb / 45P	16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
Numonyx B.V	M28W160ECT	1Mb / 50P	16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
Numonyx B.V	M28W160CT	1Mb / 50P	16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
STMicroelectronics	M29KW016E	261Kb / 31P	16 Mbit (1Mb x16, Uniform Block) 3V Supply LightFlash Memory July 2002
STMicroelectronics	M29W160ET	665Kb / 40P	16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory January 2004
Numonyx B.V	M29W160ET	1Mb / 40P	16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
Numonyx B.V	M29W160ET70N3E	813Kb / 42P	16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
STMicroelectronics	M29W160DT	386Kb / 29P	16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

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