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SST29EE010-150-4I-NH 데이터시트(PDF) 11 Page - Silicon Storage Technology, Inc |
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SST29EE010-150-4I-NH 데이터시트(HTML) 11 Page - Silicon Storage Technology, Inc |
11 / 26 page 11 © 2000 Silicon Storage Technology, Inc. 304-3 6/00 1 Megabit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 TABLE 13: PAGE-WRITE CYCLE TIMING PARAMETERS SST29EE010 SST29LE/VE010 Symbol Parameter Min Max Min Max Units TWC Write Cycle (Erase and Program) 10 10 ms TAS Address Setup Time 0 0 ns TAH Address Hold Time 50 70 ns TCS WE# and CE# Setup Time 0 0 ns TCH WE# and CE# Hold Time 0 0 ns TOES OE# High Setup Time 0 0 ns TOEH OE# High Hold Time 0 0 ns TCP CE# Pulse Width 70 120 ns TWP WE# Pulse Width 70 120 ns TDS Data Setup Time 35 50 ns TDH Data Hold Time 0 0 ns TBLC(1) Byte Load Cycle Time 0.05 100 0.05 100 µs TBLCO(1) Byte Load Cycle Time 200 200 µs TIDA Software ID Access and Exit Time 10 10 µs TSCE Software Chip-Erase 20 20 ms Note: (1)This parameter is measured only for initial qualification and after the design or process change that could affect this parameter. 304 PGM T13.3 |
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