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M29F800AT 데이터시트(PDF) 1 Page - STMicroelectronics |
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M29F800AT 데이터시트(HTML) 1 Page - STMicroelectronics |
1 / 21 page 1/21 PRELIMINARY DATA January 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. M29F800AT M29F800AB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Single Supply Flash Memory s SINGLE 5V ±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 70ns s PROGRAMMING TIME –8 µs per Byte/Word typical s 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 16 Main Blocks s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s TEMPORARY BLOCK UNPROTECTION MODE s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES per BLOCK s 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year s ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – M29F800AT Device Code: 00ECh – M29F800AB Device Code: 0058h 44 1 TSOP48 (N) 12 x 20mm SO44 (M) Figure 1. Logic Diagram AI02198B 19 A0-A18 W DQ0-DQ14 VCC M29F800AT M29F800AB E VSS 15 G RP DQ15A–1 BYTE RB |
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