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STP10NM65N 데이터시트(PDF) 5 Page - STMicroelectronics |
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STP10NM65N 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 17 page STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Electrical characteristics 5/17 Table 7. Switching times Symbol Parameter Test conditions Min Typ Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 325 V, ID = 4.5 A RG =4.7 Ω VGS = 10 V (see Figure 18) 12 8 50 20 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 9 36 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 9 A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 9 A, di/dt = 100 A/µs VDD = 100 V (see Figure 20) 330 3 19 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 9 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 20) 430 4 19 ns µC A |
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