STB12NM50T4 datasheet(3/17 Pages) STMICROELECTRONICS

부품명	STB12NM50T4

상세설명	N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

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STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1

Electrical ratings

3/17

1

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220-

/D²PAK/I²PAK

TO-220FP

VGS

Gate-source voltage

± 30

V

ID

Drain current (continuous) at TC = 25°C

12

12(1)

1.

Limited only by maximum temperature allowed

A

ID

Drain current (continuous) at TC=100°C

7.5

7.5(1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

48

48(1)

A

PTOT

Total dissipation at TC = 25°C

160

35

W

Derating Factor

1.28

0.28

W/°C

VISO

Insulation winthstand voltage (DC)

--

2500

V

dv/dt(3)

3.

ISD ≤12A, di/dt ≤400A/µs, VDD =80%V(BR)DSS

Peak diode recovery voltage slope

15

V/ns

TJ

Tstg

Operating junction temperature

Storage temperature

-65 to 150

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

TO-220/D²PAK/

I² PAK

TO-220FP

Rthj-case

Thermal resistance junction-case Max

0.78

3.57

°C/W

Rthj-a

Thermal resistance junction-ambient Max

62.5

°C/W

Tl

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

6A

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=50V)

400

mJ

유사한 부품 번호 - STB12NM50T4

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STB12NM50T4	115Kb / 14P	N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET March 2005 Rev. 2
VBsemi Electronics Co.,...	STB12NM50T4	1Mb / 8P	N-Channel 650 V (D-S) MOSFET

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