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STF40NF06 데이터시트(PDF) 5 Page - STMicroelectronics |
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STF40NF06 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 12 page STF40NF06 Electrical characteristics 5/12 Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 23 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 92 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=23A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=40A, di/dt = 100A/µs, VDD=10V, Tj=150°C (see Figure 15) 63 150 4.8 ns nC A |
유사한 부품 번호 - STF40NF06_06 |
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유사한 설명 - STF40NF06_06 |
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