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STB80PF55 데이터시트(PDF) 4 Page - STMicroelectronics |
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4 / 13 page Electrical characteristics STB80PF55 - STP80PF55 4/13 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250mA, VGS = 0 55 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC=125°C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ±16V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 3 4 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 40A 0.016 0.018 Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs Forward transconductance VDS > ID(on) x RDS(on)max, ID= 40A 32 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 5500 1130 600 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge ID = 25A, VDD = 80V, VGS = 10V (see Figure 14) 190 27 65 258 nC nC nC |
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