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SMP100-200H225 데이터시트(PDF) 3 Page - STMicroelectronics |
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SMP100-200H225 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 9 page Type IRM @VRM max. IR @VR max. note 1 VBO @IBO max. note 2 IH min. note 3 C typ. note 4 µAV µAV V mA mA pF SMP100-8 2 6 50 8 20 800 50(typ) 100 SMP100LC-35 2 32 50 35 55 800 150 90 SMP100-65 2 55 50 65 80 800 150 160 SMP100-120 2 110 50 120 160 800 150 140 SMP100-140 2 120 50 140 200 800 150 140 SMP100-200 2 170 50 200 265 800 150 130 SMP100-230 2 200 50 230 300 800 150 120 SMP100-270 2 230 50 270 350 800 150 120 SMP100-140H225 2 120 50 140 200 800 225 140 SMP100-200H225 2 170 50 200 265 800 225 130 SMP100-230H225 2 200 50 230 300 800 225 130 SMP100-270H225 2 230 50 270 350 800 225 120 Note 1 : IR measured at VR guarantees VBR>VR Note 2 : Measured at 50Hz, see test circuit 1. In any case VBOmin ≥ VBR Note 3 : See functional holding current test circuit 2. Note 4 : VR=1V bias, VRMS=1V, F=1MHz. STATIC PARAMETERS Symbol Parameter VRM Stand-off voltage IRM Leakage current at stand-off voltage VR Continuous reverse voltage IR Continuous reverse current VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance ELECTRICAL CHARACTERISTICS (Tamb =25 °C) SMP100-xxx 3/9 |
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