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5 / 14 page STB185N55F3 - STP185N55F3 Electrical characteristics 5/14 Table 5. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 120 480 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD=120A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, di/dt = 100A/µs, VDD=35V, Tj=150°C (see Figure 15) 60 0.11 3.5 ns µC A |
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